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The effect of ferro-electric (Fe) gate oxide on heterojunction and band-gap engineering based electro-statically doped source/drain (EDSD) double-gate Tunnel Field Effect Transistors (DG-TFETs), has been studied through 2-D TCAD device simulation. The combined effects of ferroelectric gate stack oxide and the hetero-junction, with low band gap material at source side and high band gap material in...
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