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The properties and behavior of trilayer structures consisting of ultrathin iridium thin films sandwiched between Cu and Si have been examined. Iridium thin films (5nm thick) were deposited on Si substrates using magnetron sputtering, followed by in situ deposition of Cu. The film stacks were examined both as-deposited and after annealing in vacuum over a temperature range of 300–600°C for 1h. X-ray...
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