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The crystal quality and stress state of Al0.5Ga0.5N epitaxial layers on 6H-SiC wafers by introducing an in-situ deposited SiNx nanomask layer grown by metal-organic chemical vapor deposition (MOCVD) were investigated. A SiNx interlayer with various growth times was inserted to the Al0.5Ga0.5N epilayers. The full width at half maximum (FWHM) of X-ray diffraction peaks and the density of etch pits decreased...
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