The production behavior of radiation-induced defects in α-alumina and sapphire was studied by in situ luminescence measurement technique under ion beam irradiation of He + . The irradiation time dependence of the luminescence intensities of the F + centers and F 0 centers at 330nm and 420nm, respectively, was measured at each temperature from 298 to 523K. By considering that the luminescence intensities represent the accumulated F + and F 0 centers, the observed irradiation time dependence was analyzed to obtain the rate constants for the production and reaction kinetics of radiation-induced defects of F-type centers.