Suitable process parameters for the growth of cubic 3C-SiC single crystals via the seeded physical vapor transport (PVT) technique, also known as the modified Lely method, have been determined. Free-standing, 200μm thick 3C-SiC epilayers with (001)- or (001¯)-face grown on undulant Si (001) as well as 3C-SiC platelets with [111]- or [1¯1¯1¯]-orientation grown by thermal decomposition of methyl trichlorosilane in hydrogen were employed as seed crystals. The source material consisted of stoichiometric SiC; in addition, a separate Si source was deposited in the furnace at a temperature of about 1500°C. The temperature of the seed crystals was kept at about 1900°C. Stable growth of 3C-SiC bulk material of high crystalline quality was reached on 3C-SiC seed crystals with (001)-face providing a low density of planar defects and at near-thermal-equilibrium conditions resulting in a reduction of internal stress and as a consequence in avoiding the generation of new extended crystal defects. The growth rate achieved under these conditions was approximately 0.05mm/h. The nitrogen donor concentration in the grown 3C-SiC crystals was determined to be equal to (2–6)×10 18 cm −3 .