Metal-organic chemical vapor deposition (MOCVD) was applied to prepare yttria stabilized zirconia (YSZ) films using Zr(dpm) 4 and Y(dpm) 3 precursors. The crystal structure of YSZ films changed with increasing Y 2 O 3 content from a mixture of monoclinic and tetragonal phases (0-2 mol% Y 2 O 3 ) to a tetragonal phase (2-8 mol% Y 2 O 3 ) to a cubic phase (above 8 mol% Y 2 O 3 ). YSZ films with a well-developed columnar structure and a significant (200) orientation were obtained at T d e p =923 to 1073 K. The deposition rate showed the highest value of 108 μm h - 1 at T d e p =1073 K, total pressure P t o t =0.8 kPa, molar fraction of Zr precursor x Z r =0.018 and that of oxygen gas x O 2 =0.25.