Fluorine-doped tin oxide films were deposited on silicon, glass and quartz substrates at 370–490°C by atmospheric-pressure chemical vapor deposition from (CH3(CH2)3)2Sn(O2CCF3)2 and oxygen. Backscattering spectra indicate the films are stoichiometric with O/Sn ratios of 1.9–2.0. Nuclear reaction analysis (NRA) for fluorine gives F/Sn ratios of 0.005–0.015 with the amount of fluorine in the films increasing with increasing deposition temperature. The films are transparent in the visible region (>75%) and have resistivities as low as 8.2×10−4 Ω cm. X-ray diffraction studies indicate the films deposited on glass are polycrystalline.