Temperature dependences of the dc conductivity and thermopower of bulk amorphous alloy Al 3 2 Ge 6 8 were investigated at 6-420 K and at 80-370 K, respectively. The samples were prepared by solid-state amorphisation of a quenched crystalline high-pressure phase while heating from 77 to 400 K at ambient pressure. Amorphous Al 3 2 Ge 6 2 was found to be p-type semiconductor with an unusual combination of transport properties. The change of properties was described semi-quantitatively in terms of a modified Mott-Davis model assuming that the Fermi level lies inside the valence band tail.