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Homoepitaxial growth of ZnTe layers have been investigated by changing the total gas flow rate in a metalorganic vapor phase epitaxial system using a horizontal reactor. Correlations between the growth process and the photoluminescence properties of the layers have been clarified. A high-quality ZnTe homoepitaxial layer with strong free excitonic emission was obtained in this experiment. The binding energy of the free exciton and the temperature dependence of the band gap has been investigated using this sample. The resistivity of a sample was estimated to be as high as 5x10 8 Ωcm supporting a high-quality epitaxial layer.