The properties of pulsed laser vapor doping on p-Si(100) with a KrF (248nm) excimer pulsed laser (248nm) and BCl 3 gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl 3 were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(100) and p-Si(111). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal-semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.