A group of AlInGaAs/InGaAs/InAs strain compensated triangular quantum well samples have been grown by using gas source molecular beam epitaxy (GSMBE), and their properties are investigated by X-ray diffraction and photoluminescence (PL) measurements. Through the adjustment of the growth temperature and barrier width, the quality of the quantum wells has been improved distinctly. The maximal PL peak wavelength of 2.38μm at 300K has been reached. The X-ray diffraction measurements show good structural properties and the full-width at half-maximum (FWHM) of PL spectrum is 17meV at 12K and 33meV at 300K. For the sample with larger well width, the transition involving the second sub-energy levels occurs.