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We developed a novel etch stopper (ES) hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) with an ultra-thin active layer. The photo-leakage currents of an ES a-Si:H TFT under back-light are smaller when the optical absorption in the a-Si:H is smaller. The field-effect mobility, subthreshold slope, and on/off current ratio of the TFT were 1 cm 2 /Vs, 0.54 V/dec, and ~10 7 , respectively.