C 6 0 layers deposited on GaAs(110) and iron deposited on C 6 0 were studied by photoelectron spectroscopy using He-I and Al-K[alpha ] radiation. The spectra demonstrate no hybridisation between the electronic states of GaAs(110) and C 6 0 . Thus GaAs(110) is a suitable substrate to grow smooth layers of C 6 0 . Fe does not grow in layers on C 6 0 , but instead forms clusters. The spectra also show evidence for hybridisation between the electronic levels of Fe and C 6 0 .