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Photoluminescence (PL) measurements were performed in order to investigate the carbon impurity effects on the intermixing behavior of GaAs/AlAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The GaAs/AlAs MQWs were annealed with a carbon source in a furnace annealing system. The PL spectra show that the magnitude of the intermixing of Al and Ga induced by thermal annealing in GaAs/AlAs MQWs increases with depth. The nonuniformity of the intermixing as a function of the depth originated from the carbon impurities which were injected during thermal treatment.