We have modeled damage creation by an analyzing beam during channeling Rutherford backscattering spectrometry (RBS) analysis. Based on classic scattering theory and the assumption that only a dechanneled ion beam can cause displacements, a chi-square approach is used to fit the modeled spectra with experimental profiles, to extract the dechanneling cross section and the displacement creation efficiency. The study has shown that, for a 2.0MeV He beam channeled along a Si(100) axis, the efficiency of defect creation by dechanneled beams is about 8% of the value predicted from the Kichin–Pease model. This suggests a significant dynamic annealing of point defects. The modeling procedure in this work can be used to predict the displacement creation during channeling RBS analysis.