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Growth conditions of Y 1 Ba 2 Cu 3 O 7-δ (YBCO) films on substrates whose crystalline axes were tilted by 20° with respect to their surfaces were investigated. Yttria-stabilized zirconia (YSZ) and CeO 2 were deposited for buffer layers. The important parameters for c-axis normal and in-plane axes aligned growth of YBCO overlayer were the thickness of the buffer layer and deposition temperature. High quality YBCO film was obtained with the optimized values of these parameters.