Photoelectrode of nanocables (NCs) structure of ZnO nanowires (NWs) coated with Al-doped ZnO (AZO) shells was investigated for CdS quantum dots sensitized solar cells (QDSSCs). ZnO NWs serve as the frame for the preparation of AZO shells, in which electron transport more rapidly due to the more higher electron mobility of AZO (n-ZnO) than that of i-ZnO. AZO shells were assembled onto the surface of ZnO NWs via a spin-coating method. Optical band-gap of the ZnO/AZO films varies from 3.19eV for pure ZnO to 3.25eV for AZO (15%) depending on the Al-doping concentration. The PL intensity of AZO/ZnO, Voc, Jsc and η of the cells first increased and then decreased with the increase in the Al-doping (from 0% to 20%) and post-annealed temperature. Remarkably, the value of Voc can achieve above 0.8V after Al-doping. The dark current and absorption spectrum provided direct evidence of the increase in Jsc and Voc, respectively. Moreover, we discussed the effect of Al-doping on optical band-gap of the samples and the transfer of electron.