A new ternary compound HoAl 0.34 Ge 2 has been synthesized and studied from 298K to 773K by means of X-ray powder diffraction technique. The crystal structure of HoAl 0.34 Ge 2 has been determined by using Rietveld method. The ternary compound HoAl 0.34 Ge 2 crystallizes in the orthorhombic defect CeNiSi 2 structure type (space group Cmcm, a=0.40905(1)nm, b=1.61575(5)nm, c=0.39395(1)nm, Z=4 and D calc =8.145gcm −3 ). The average thermal expansion coefficients α¯a, α¯b and α¯c of HoAl 0.34 Ge 2 are 1.89×10 −5 K −1 , 0.87×10 −5 K −1 and 1.59×10 −5 K −1 , respectively. The average coefficient of bulk thermal expansion α¯V is 4.25×10 −5 K −1 . Electrical resistivity of HoAl 0.34 Ge 2 was measured between 5K and 300K. It shows metallic-like behavior of conductivity in the investigated temperature range.