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Light emitting diodes were grown by molecular beam epitaxy using NH 3 as nitrogen precursor. The active layer is composed by a single plane of undoped InGaN layer with about 15% of In. The structure was buried by 2700 Å of Mg-doped GaN (p=1x10 17 cm -3 ). The turn on voltage is at 4.5 V and the operating voltage is 6.1 V at 20 mA. Temperature dependent I(V) characteristics reveal the predominance of tunneling injection current. We measure room temperature electroluminescence in the blue from 440 to 490 nm with a narrow full width at half maximum.
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France