The optical transparencies and electrical conductivities of thin films of In 2 O 3 , SnO 2 and ZnO mixed with ZrO 2 have been investigated. These films were deposited on glass substrates at room temperature using pulsed-laser deposition. Indium-zirconium oxide films with a ZrO 2 content up to 15 wt.% were conducting and more than 80% transparent from 450-700 nm. As the ZrO 2 content increased from 0 to 15 wt.%, the electrical resistivities increased from 1.28x10 - 3 to 6.48x10 - 2 Ω cm; the carrier densities decreased from 2.14x10 2 0 to 1.0x10 1 8 cm - 3 ; and the Hall mobilities decreased from 21 to 5 cm 2 V - 1 s - 1 , all monotonically. The electrical resistivities of tin-zirconium oxide increased from 1.65x10 - 2 to 7.33x10 - 2 Ω cm as the ZrO 2 content varied between 0 and 5 wt.%, whereas the resistivities of the zinc-zirconium oxide varied from 3x10 - 2 to 3.5x10 - 1 Ω cm for ZrO 2 contents between 0 and 10 wt.%.