Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (Ib ∼30, 40 and 50mA) and at a substrate temperature of 200°C. Near stoichiometric CuSbSe2 thin films were obtained for Ib values closer to 50mA and post annealing at a temperature of 380°C for 1h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (α) values of >105cm−1 and a band gap value ∼1.18eV that is closer to the reported band gap for CuSbSe2 compound.