Structural, electrical and multiferroic properties were investigated for the Bi 2 Fe 4 O 9 and the Bi 2 Fe 3.4 Ti 0.6 O 9+δ thin films prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by using a chemical solution deposition method. Both X-ray diffraction and Raman spectroscopy studies revealed that the Bi 2 Fe 4 O 9 and the Bi 2 Fe 3.4 Ti 0.6 O 9+δ thin films were crystallized in a single phase of polycrystalline orthorhombic structure. From leakage current densities and ferroelectric hysteresis loops, a low order of leakage current density of 9.23×10 −7 A/cm 2 and an enhanced remnant polarization (2P r ) of 1.5μC/cm 2 with a low coercive field of 126kV/cm were observed for the Bi 2 Fe 3.4 Ti 0.6 O 9+δ thin film. The Bi 2 Fe 4 O 9 and the Bi 2 Fe 3.4 Ti 0.6 O 9+δ thin films showed a weak ferromagnetism at room temperature. On comparing with a bulk ceramic form of Bi 2 Fe 4 O 9 , in thin film form it showed remarkably enhanced multiferroic properties.