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Electrical conductivities of nanocrystalline CdTe films deposited onto quartz substrates by high-pressure (~20 Pa) DC magnetron sputtering were studied as a function of temperature (188–298 K). The grain size varied within 4 to 4.7 nm with the variation of deposition temperature (Ts) within 253 to 273 K. The conductivity (σ) showed (T0/T)p dependence with p~0.5 indicating the presence of a Coulomb gap near the Fermi level. Efros–Shklovskii (ES) hopping was found to be the predominant carrier conduction mechanism in the nanocrystalline CdTe films. The width of the Coulomb gap varied within 27–41 meV depending on the deposition conditions. Cross-over from ES to Mott's hopping was observed. The existing theoretical models were used for estimating hopping energy (29 to 42 meV) and hopping distance (2.8 to 5.1 nm) in the films.