At 4.2K, the coercive field of Ni film on GaAs (001) was five times larger than that of Ni/Si (001). Because of these findings, a multilayer, Ni/Si/Ni/GaAs was prepared and its magnetization process was studied in a temperature range from 1.8 to 360K. At temperatures below 250K, an antiparallel spin state was observed, and this became the strongest at the lowest (1.8K) temperature. The bottom Ni layer of the multilayer was observed to be totally influenced by the underneath GaAs but not by the Si.