An investigation of selected contacts for indium doped cadmium sulphide (CdS:In) thin films was performed through the analysis of the I–V characteristics in the dark and room light at room temperature. Indium, aluminum and silver were selected as contacts where two strips of each metal were vacuum- evaporated on the surface of the film. All of these metals could form ohmic contacts, but indium had shown the best characteristics then aluminum. Films with indium contacts gave the best electrical properties and they are slightly affected by light. Doping and annealing were found to improve the contacts as seen in the I–V plots because they are expected to reduce the contact potential and annealing helps in the formation of an alloy with the semiconductor which forms an ohmic contact.