Indium tungsten oxide (In 6 WO 1 2 ) powders and thin films were prepared from a 2,4-pentanedione solution containing In(NO 3 ).xH 2 O and WCl 6 . X-ray diffraction results indicated that phase-pure In 6 WO 1 2 powder formed after drying and heating the solution at 900 o C. Glancing X-ray diffraction results indicated that thin-film samples prepared on fused quartz substrates at 600 and 700 o C contained a disordered fluorite-related phase whereas those prepared at 800 o C contained the ordered compound-In 6 WO 1 2 . Films prepared at 900 o C reacted with the substrate to form In 2 Si 2 O 7 . Despite the chemical and structural similarity of In 6 WO 1 2 to several indium-containing fluorite-related oxides, including In 2 O 3 , In 3 Sn 4 O 1 2 , and Ga 3 - x In 5 + x Sn 2 O 1 6 , the resistivity of the films prepared in this study ranged from 70 to 720 Ωcm, which is several orders of magnitude higher than reported for the related oxides (approx. 10 - 3 Ωcm). The band gaps of the films prepared at 600 and 700 o C were estimated from optical transmittance measurements to be 4.1 and 3.8 eV, respectively. Films prepared at 700 o C exhibited substantial coloration when exposed to n-butyl lithium whereas those prepared at 800 o C did not.