In this work, Gd-oxide dielectric films were deposited on Si by pulse laser deposition method (PLD), moreover, the micro-structures and electrical properties were reported. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that Gd-oxide was polycrystalline Gd 2 O 3 structure, and no Gd metal phase was detected. In addition, both interface at Si and Ni fully silicide (FUSI) gate were smooth without the formation of Si-oxide. X-ray photoelectron spectroscopy (XPS) confirmed the formation of Gd 2 O 3 and gave an atom ratio of 1:1 for Gd:O, indicating O vacancies existed in Gd 2 O 3 polycrystal matrix even at O 2 partial pressure of 20mTorr. Electrical measurements indicated that the dielectric constant of Gd-oxide film was 6 and the leakage current was 0.1A/cm 2 at gate bias of 1V.