Boron doped p-type hydrogenated microcrystalline silicon (μc-Si:H) films have been prepared by radio-frequency glow discharge method. Highly conductive p-type μc-Si:H films can be obtained even with lower concentration of hydrogen in the rf glow discharge plasma if chamber pressure is low. Effects of increase in hydrogen (H 2 ) flow rate and chamber pressure have been studied. The structural properties of the films have been studied by X-ray diffractometry. The electrical and optical characterization have been done by dark conductivity, Hall measurements and optical absorption measurements respectively. Film with conductivity 0.1 (Ω-cm) - 1 with band gap 2.1 eV has been obtained.