Thin film solar cells of CdS/Sb2S3/C-Ag are developed on glass substrates coated with SnO2:F (FTO) by thermal evaporation of Sb2S3 powder. At a thickness of 110nm, Sb2S3 thin film which is heated at 300°C has an optical band gap Eg of 1.75eV; optical absorption coefficient in the visible region of >105cm−1; and photoconductivity (n-type) of 1.5×10−6Ω−1cm−1. The film with 450nm in thickness is of Eg 1.5eV. A solar cell, FTO/CdS/Sb2S3 (450nm)/C-Ag, prepared with this film has an open circuit voltage, Voc, of 600mV, short circuit current density, Jsc, of 6.1mA/cm2, and a solar energy conversion efficiency of 1.27%.