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In this work, Ga-doped ZnO (GZO) films were prepared using the sol–gel dip coating method and the effects of film thickness (230–480nm), heating temperature (400–600°C) and atmosphere (air/argon) on the system structural and opto-electronic performances were investigated. The results show that highly c-axis oriented crystals could be easily formed in GZO coatings, which origins from a preferred nucleation...
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