To investigate temperature-dependent ferroelectric and dielectric properties of ferroelectric films, Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared on Pt-coated silicon substrates by pulsed laser deposition. The ferroelectric and dielectric behaviors have been studied in a wide temperature range from 80K to room temperature. The saturated polarization (P sat ) decreases with decreasing temperature and decreasing electric field, whereas remnant polarization (P r ) shows a more complex temperature dependence. These results, which can be well explained based on a temperature-dependent charged defects–domain wall interaction model, might be helpful for further understanding the domain switching behavior. Based on these results, an alternative way to investigate temperature-dependent ferroelectric fatigue is proposed and experimentally carried out. The measured fatigue rate is found to be linearly dependent on temperature, consistent with the report on Pb(Zr,Ti)O 3 films. Temperature-dependent dielectric measurements of the films further confirm the above explanation.