The properties of molybdenum trioxide (20nm)/silver (xnm)/molybdenum trioxide (35nm) multilayer structures, deposited by simple vacuum evaporation, depend significantly on the deposition rate and on the thickness of the silver layer. If the presence of a commutation from an insulating state to a highly conductive state in these structures is usual, we show that, the thickness of the layer of Ag corresponding to the percolation of the metal paths, decreases from 8nm to 4nm when the Ag deposition rate increases from 0.2nm/s to 0.4nm/s. The transmission being optimum at 10–11nm, the calculation of the factor of merit shows that the best structures are obtained for silver films approx. 10nm thick deposited at a rate between 0.3nm/s and 0.4nm/s. When the optimal structures MoO 3 /Ag/MoO 3 are used as anode in planar organic solar cells anode/CuI/CuPc/C 60 /Alq 3 /Al they allow achieving power conversion efficiency of the same order of magnitude than that achieved by reference cells using ITO as anode.