Bismuth titanate (Bi 4 Ti 3 O 12 , BIT) films were evaluated for use as lead-free piezoelectric thin films in micro-electromechanical systems. The films were grown by the polymeric precursor method on LaNiO 3 /SiO 2 /Si (100) (LNO), RuO 2 /SiO 2 /Si (100) (RuO 2 ) and Pt/Ti/SiO 2 /Si (100) (Pt) bottom electrodes in a microwave furnace at 700°C for 10min. The domain structure was investigated by piezoresponse force microscopy (PFM). Although the converse piezoelectric coefficient, d 33 , regardless of bottom electrode is around (∼40pm/V), those over RuO 2 and LNO exhibit better ferroelectric properties, higher remanent polarization (15 and 10μC/cm 2 ), lower drive voltages (2.6 and 1.3V) and are fatigue-free. The experimental results demonstrated that the combination of the polymeric precursor method assisted with a microwave furnace is a promising technique to obtain films with good qualities for applications in ferroelectric and piezoelectric devices.