Quantum wells with excitonic features in the visible wavelength range were designed using the Al( x )Ga 1 - x As/Al( y ) Ga 1 - y As material system, and grown using low pressure metal organic vapour phase epitaxy. Characterisation of these quantum well samples was carried out by using photovoltaic spectroscopy, photoluminescence, differential reflectance or photoreflectance techniques. These measurements showed that excitonic absorption in the 520-630 nm range could be achieved using these AlGaAs quantum wells.