Relatively low energy (2-30 keV) neon ions have been scattered on amorphous silicon surface, at two angles of incidence (α = 6°, 20°) with respect to the surface, to investigate the different possibilities of Ne + -Si surface charge exchange.The charge fractions are high compared with other rare gases. This is explained by the high reionization efficiency in the close encounter due to the electron promotion mechanisms and the production of autoionizing state of Ne decaying by electron emission outside the solid.We have found, that at relatively small grazing incidence (α = 6°) the neutralization phenomena are predominated by Auger transition between the valence band of silicon surface and the perturbed ionization energy level of the incident ion. This process could be, to a high degree of validity, interpreted by the dependence of the ion escape probability on the inverse of the outcoming normal velocity component. That is the Hagstrum model.At greater incidence angle it is found that the charge fraction diminishes when a increases, this can be ascribed to the deeper penetration of the incident particles inside the target and consequently, to a higher neutralization probability along the outgoing trajectory.