The effect of nitrogen doping on the mechanical and electrical performance of single-layer tetrahedral amorphous carbon (ta-C:N) coatings of up to 1μm in thickness was investigated using a custom-made filtered cathode vacuum arc (FCVA). The results obtained revealed that the hardness and electrical resistance of the coatings decreased from 65±4.8GPa (3kΩ/square) to 25±2.4GPa (10Ω/square) with increasing nitrogen gas ratio, which indicates that nitrogen doping occurs through substitution in the sp2 phase. Subsequent AES analysis showed that the N/C ratio in the ta-C:N thick-film coatings ranged from 0.03 to 0.29 and increased with the nitrogen flow rate. Variation in the G-peak positions and I(D)/I(G) ratio exhibit a similar trend. It is concluded from these results that micron-thick ta-C:N films have the potential to be used in a wide range of functional coating applications in electronics.