To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4min growth of InN at 400°C and 3s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660°C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200nm. With increasing annealing temperature up to 620°C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0002) reflection and E 2 (high) mode peak of Raman scattering spectra decreased. A peak of In (101) appeared in X-ray diffraction by annealing higher than 590°C, and In droplets were found on the surface by annealing at 660°C.