Using TiCl 4 , O 2 , and NH 3 as gas precursors, N-doped titanium dioxide films with large areas and continuous surfaces were deposited by atmospheric pressure chemical vapor deposition (APCVD). Measurements were performed by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and ultraviolet visible (UV–vis) transmission spectra. Using NH 3 as the N-doping source, Ti 4 O 7 is induced into the thin films, and anatase–rutile transformation is inhibited. Compared to pure TiO 2 , N-doped TiO 2 films deposited with lower NH 3 flows (<90sccm) give a relatively narrow band gap (from 3.21 to 2.76eV), and their visible light-induced photocatalysis and hydrophilicity are much enhanced without a decrease in ultraviolet light activity. Preparation of N-doped TiO 2 films by APCVD with low cost and high deposition rate (150nm/min) is compatible with float glass processing, and has a potential industrial application.