Photoelectrically active tin selenide coatings of nanometric thickness were manufactured by electrodeposition from separate solutions of Sn and Se precursors. Sn was deposited from acidic SnSO 4 electrolytes and Se was deposited from H 2 SeO 3 solutions. Fine-grained Sn coatings were deposited at potential φ=−0.3V with 100% current efficiency. Se coatings were formed at two potentials: φ=−0.5V, forming Se 0 , and φ=−0.85V, forming Se 2− ions. After the Sn coating was immersed into H 2 SeO 3 solution, small quantities (∼2at.%) of SnSe were formed and SeO 3 2− was adsorbed on the surface. A short-time deposition of Se at φ=−0.5V passivated the surface, so no Sn dissolution is observed upon anodic polarization. XPS and Auger data indicated that under those conditions 20at.% of Se 0 and only 2at.% of SnSe were formed. Thickening of Sn and Se layers led to formation of larger quantities of Se 0 (75at.%) and SnSe (4–5at.%) on the surface, whereas deeper layers contained up to 10 times more of SnSe phase. Upon deposition of Se at φ=−0.85V, new SnSe 2 phase was formed and the quantity of SnSe phase is increased and that of Se 0 was reduced. All coatings formed exhibited photoelectric properties.