The compositional dependence of co-sputtered Ti–In–Zn–O film properties was investigated by means of a combinatorial technique. The X-ray diffraction result showed that the amorphous Ti–In–Zn–O films were fabricated regardless of the Ti contents [Ti/(Ti+In+Zn), at.%] of 4.5–34.4at.%. The surface of amorphous Ti–In–Zn–O film is quite smooth. The obtained surface roughness (R RMS ) values ranged from 0.5nm to 1.7nm. The superior resistivity of 3.8×10 −4 Ωcm and the transmittance of 92% (at 550nm) was obtained for the Ti–In–Zn–O film with the elemental composition ratio of 18.6/68.5/12.9at.% [Ti/In/Zn, at.%]. The indium quantity actually could be reduced to as high as ~15at.% compared to that of commercial indium tin oxide or indium zinc oxide having similar resistivity value of ~10 −4 Ωcm. Overall, the amorphous Ti–In–Zn–O films may serve as a viable, low-cost alternative for flexible transparent conducting electrode applications.