The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A review of experimental results on the hot-electron fluctuations specific to a two-dimensional electron gas confined in a heterostructure channel is given. The main attention is paid to AlGaAs/GaAs and InP-based InGaAs channels subjected to a high electric field applied along the ungated channel. The microwave electronic noise caused by the hot-electron fluctuations is analyzed in terms of fast and ultrafast kinetic processes.