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A combined buffer layer growth process was developed to grow crack-free GaN layers on 8-inch Si(111) wafers and so light-emitting diodes (LEDs). The combined buffer layer consisted of 2 nm-thick low-temperature (LT, 850 °C)-AlN, 8 nm-thick graded-temperature AlN, and 200 nm-thick high-temperature (HT, 1100 °C)-AlN layers. The X-ray diffraction (XRD) results showed that the LT-HT-AlN buffer layer exhibited...
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