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The frequency dependent electrical behavior of BiFeO3 MOS capacitors was studied in this work. BiFeO3 thin films were deposited on p-type Si (100) substrates at 0°C by RF magnetron sputtering and the structures were investigated by XRD and SEM measurements. Electrical characteristics of the capacitors were determined by C–V and G/ω–V measurements for several frequencies from 10kHz to 1MHz. The results...
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