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The structural characteristics of epitaxial Ge1Sb2Te4 deposited by MOVPE are reported. X-ray diffraction, electron backscatter diffraction as well as high resolution transmission electron microscopy were carried out. The Ge1Sb2Te4 layers crystallize in the trigonal space group R3¯m with lattice constants a=4.27Å and c=41.0Å (in hexagonal description). Seven alternating anion and cation layers forming...
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