Resistance random access memory consisting of ZnO/TiO2/Cu structure is demonstrated on a flexible and transparent PET/ITO substrate. To improve cell to cell uniformity, amorphous TiO2 fabricated by atomic layer deposition is used for resistive switching material with ZnO film as a blocking layer. XRD, SEM and AFM measurements were used to analyze the composition and structure of the ZnO/TiO2 films. XPS spectra and depth profile of the ZnO/TiO2 structure were thoroughly investigated to verify the chemical composition of the films. Resistive switching characteristics were measured and conduction mechanism was analyzed according to above analysis.