Ba 2 MgSi 2 O 7 :Eu 2+ ,R 3+ (R=Y, La–Nd, Sm–Lu) materials were prepared with a solid state reaction. The UV excited (λexc=355nm) and persistent luminescence bands of Ba 2 MgSi 2 O 7 :Eu 2+ were both centered at 500nm and thus they are due to the same Eu 2+ ions. The Tm 3+ co-doping induced by far the strongest enhancement of the persistent luminescence intensity and duration. The next strongest enhancement was achieved by the Er 3+ , Nd 3+ and Pr 3+ co-doping. The enhancement by the remaining R 3+ co-doping ions was quite similar. The decay of the persistent luminescence consists of at least three processes. First process is very fast whereas the lifetime of the second process is in the range from 3.7 to 9min depending on the co-doping ion. For the Pr 3+ , Nd 3+ , Er 3+ and Tm 3+ co-doped materials a third process with a lifetime varying from 14 to 28min is observed. The persistent luminescence is suggested to involve lattice defects, i.e. oxygen (cation) vacancies, which create trapping levels for electrons (holes). The details of the mechanism(s) are still, however, under further investigations.