Variable range hopping conduction of Efros and Shklovskii type when a Coulomb gap appears at the Fermi level due to repulsive interaction of the holes, is observed in two different temperature regions in the ordered defect compound CuGa3Te5. Since this type of electrical conduction appears over a very wide temperature range between 4 and 150 K, not reported before in elemental II-VI, and I-III-VI2 compound semiconductors, three different methods were employed to analyze the data to confirm this behavior. This is also supported from the study of the variation of impurity band hole mobility with temperature. Other hopping parameters are estimated. The logarithmic variation of the positive magnetoresistance at different temperatures in the two regions varies as B2 and B1/5 above and below the critical field Bc, that separates the low and high magnetic field regions. This is in complete agreement with the theory of Efros and Shklovskii. The temperature dependence of the corresponding slope as T - 3/2 and T - 3/5 is also consistent with the proposed models.