Using two types of selective growth, selective C 60 growth and selective Si growth, on a common Si(111) substrate, an array of C 60 nanoribbons with controlled values of width and thickness is fabricated. On a surface that has Si(111)√3×√3R30°–Ag (referred to as Si(111)√3–Ag hereafter) and bare Si(111) regions at the same time, the preferential growth of C 60 multilayered film is recognized on the Si(111)√3–Ag region. The growth of Si selectively occurs on a bare Si(111) region if the substrate surface has C 60 -adsorbed and bare Si(111) regions at the same time. As a demonstration of the use of these selective growths, we fabricate an array of well-isolated C 60 nanoribbons, which show a well-ordered molecular arrangement and have sizes of about 40nm in widths and 3–4nm in thicknesses.