High-performance rubrene single-crystal field-effect transistors are developed with binary ionic liquid electrolytes used for gating. Inclusion of small amount of inorganic salts in the ionic liquids enhances the degree of dissociation for the organic ions and accelerates formation of the electric-double-layers in response to the gate voltage. High carrier mobility of 2.9cm 2 /Vs is achieved in the rubrene single-crystal transistors with the mixture ionic liquid. In addition to the advantage of the low-voltage operation due to concentrated field in ultra-thin electric-double-layers, drastically increased capacitance at above 100Hz makes the technique of the ionic liquid gating more attractive for fast-switching devices.