A double photodiode (DPD) and a phototransistor were implemented in an industrial 0.8μm bipolar complementary metal oxide semiconductor (BiCMOS) n-well process. Both devices are 100% BiCMOS compatible, so that no process modifications were necessary. A -3dB bandwidth of more than 200MHz was measured for the DPD. The rise and fall times of the photodiode are less than 1ns. By an optimized antireflection coating layer for a wavelength of 638nm a quantum efficiency of η=95%, which corresponds to a responsivity of R=0.49A/W, is achievable. A phototransistor with a light-sensitive area of 53x53μm 2 was developed. Its current amplification of B=300 results in a much larger responsivity compared to the photodiodes. Measurements have shown a-3dB bandwidth of 7.8MHz for the phototransistor.